Thermal conductance of laterally-wet-oxidised GaAs/AlxOy Bragg reflectors

Le Du, M. and Massoubre, David and Harmand, J.C. and Oudar, J.L. (2006) Thermal conductance of laterally-wet-oxidised GaAs/AlxOy Bragg reflectors. Electronics Letters, 42 (18). pp. 1060-1062. ISSN 0013-5194 (https://doi.org/10.1049/el:20062192)

Full text not available in this repository.Request a copy

Abstract

Thermal resistivity measurements were carried out on GaAs-based monolithic saturable absorber microcavities. Two-types of microcavity mirrors were compared: GaAs/AlAs against GaAs/AlxOy Bragg reflectors processed by lateral-wet-oxidation of Al(Ga)As layers. It is found that GaAs/AlxOy mirrors are not efficient heat dissipators, the GaAs/AlxOy microcavity structure showing a thermal resistivity more than ten times higher than the GaAs/AlAs structure. Using modelling to fit the experimental data, thermal conductivity of the 250 nm AlxOy layers is estimated to be approximately 0.007 WK–1cm–1. These results illustrate a significant drawback related to the use of thick wet-oxidised Al(Ga)As/GaAs layers

CORE (COnnecting REpositories)