Electron mobility in amorphous silicon thin-film transistors under compressive strain

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Gleskova, H. and Wagner, S. (2001) Electron mobility in amorphous silicon thin-film transistors under compressive strain. Applied Physics Letters, 79 (20). pp. 3347-3349. ISSN 0003-6951 (https://doi.org/10.1063/1.1418254)

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Abstract

We evaluated amorphous silicon thin-film transistors under uniaxial compressive strain of up to 1%. The on-current and hence the electron linear mobility decrease. The off-current, leakage current, and the threshold voltage do not change. The mobility decreases linearly with applied compressive strain. Upon the application of stress for up to 40 h the mobility drops "instantly" and then remains unchanged. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility.

ORCID iDs

Gleskova, H. ORCID logoORCID: https://orcid.org/0000-0001-7195-9639 and Wagner, S.;
CORE (COnnecting REpositories)