Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient

Chen, Y. and Schmidt, J. and Siller, L. and Barnard, J.C. and Palmer, R.E. and Burke, T.M. and Smith, M.P. and Brown, S.J. and Ritchie, D.A. and Pepper, M. (2000) Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient. Applied Physics Letters, 76 (21). 3034. ISSN 0003-6951 (https://doi.org/10.1063/1.126570)

Full text not available in this repository.Request a copy

Abstract

We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].

  • Item type:Article
    ID code:35391
    Dates:
    Date
    Event
    22 May 2000
    Published
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:04 Nov 2011 11:58
    Last modified:11 Nov 2024 09:58
    URI:https://strathprints.strath.ac.uk/id/eprint/35391
CORE (COnnecting REpositories)