Comparison of dark and light-induced annealing of metastable defects in a-Si:H
Gleskova, Helena and Nakata, M. and Wagner, S.; Hack, M. and Madan, A. and Matsuda, A. and Powell, M. and Schiff, E. A., eds. (1994) Comparison of dark and light-induced annealing of metastable defects in a-Si:H. In: Amorphous silicon technology - 1994. MRS Symposium Proceedings, 336 . Materials Research Society, USA, pp. 245-250. ISBN 9781558992368
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This chapter looks at a comparison of dark and light-induced annealing of metastable defects in a-Si:H
ORCID iDs
Gleskova, Helena ORCID: https://orcid.org/0000-0001-7195-9639, Nakata, M. and Wagner, S.; Hack, M., Madan, A., Matsuda, A., Powell, M. and Schiff, E. A.-
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Item type: Book Section ID code: 33441 Dates: DateEvent4 November 1994PublishedSubjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Pure Administrator Date deposited: 04 Nov 2011 16:30 Last modified: 11 Nov 2024 14:44 URI: https://strathprints.strath.ac.uk/id/eprint/33441
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