Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

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Gleskova, Helena and Wagner, S. (1995) Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? Journal of Non-Crystalline Solids, 190 (1-2). pp. 157-162. ISSN 0022-3093 (https://doi.org/10.1016/0022-3093(95)00269-3)

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Abstract

Results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H) are reported. The hypothesis that defect annealing by both heating or illumination is driven by the density of free electrons was tested. This hypothesis is formulated via the rate equation , where N is the defect density, t is the time, A is a constant, n is the free electron density and f(T) is a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with ranging from 0.39 to 0.76, but not the third set, where the temperature was varied.

ORCID iDs

Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639 and Wagner, S.;
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