Photoresist-free fabrication process for a-Si:H thin film transistors

Gleskova, H. and Wagner, S. and Shen, D. S. (1998) Photoresist-free fabrication process for a-Si:H thin film transistors. Journal of Non-Crystalline Solids, 227-230 (PART 2). pp. 1217-1220. ISSN 0022-3093 (https://doi.org/10.1016/S0022-3093(98)00308-1)

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Abstract

We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of ∼ 107, a threshold voltage of ∼ 3 V and an electron mobility of ∼ 1 cm2 V-1 s-1.

ORCID iDs

Gleskova, H. ORCID logoORCID: https://orcid.org/0000-0001-7195-9639, Wagner, S. and Shen, D. S.;
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