Growth and characterisation of Eu doped GaN thin films

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Halambalakis, G and Rousseau, N and Briot, O and Ruffenach, S and Aulombard, R L and Edwards, P R and O'Donnell, K P and Wojtowicz, T and Ruterana, P (2004) Growth and characterisation of Eu doped GaN thin films. Superlattices and Microstructures, 36 (4-6). pp. 721-728. (https://doi.org/10.1016/j.spmi.2004.09.028)

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Abstract

We have studied the optical properties of Eu doped GaN thin films. We have grown high quality Eu doped GaN thin films by using Gas Source Molecular Beam Epitaxy (GSMBE), with 1.4% Eu concentration. The Full Width at Half Maximum (FWHM) of the X-ray diffraction in an omega scan was found to be 288 arcsecs. Low Eu concentration (0.08%) doped GaN thin films were grown, where Eu-related photoluminescence at 622 and 613 nm was detected using above band-gap excitation at 2 K. For high Eu concentration of 30% GaN:Eu crystal photoluminescence (PL) and cathodoluminescence (CL) spectra show strong and intense transitions at 622 and 664 nm, but also at 593 nm for CL spectra, with a similar transition observed from the low Eu concentration sample.

ORCID iDs

Halambalakis, G, Rousseau, N, Briot, O, Ruffenach, S, Aulombard, R L, Edwards, P R ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, O'Donnell, K P ORCID logoORCID: https://orcid.org/0000-0003-3072-3675, Wojtowicz, T and Ruterana, P;
  • Item type:Article
    ID code:30537
    Dates:
    Date
    Event
    2004
    Published
    Subjects:Science > Physics > Optics. Light
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:17 Apr 2011 04:10
    Last modified:11 Nov 2024 09:43
    URI:https://strathprints.strath.ac.uk/id/eprint/30537
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