Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation

Jamison, S.P. and Ersfeld, B. and Jaroszynski, D.A. (2004) Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation. Current Applied Physics, 4 (2-4). pp. 217-220. ISSN 1567-1739 (http://dx.doi.org/10.1016/j.cap.2003.11.013)

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Abstract

Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.

  • Item type:Article
    ID code:18238
    Dates:
    Date
    Event
    April 2004
    Published
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Strathprints Administrator
    Date deposited:01 Apr 2010 13:34
    Last modified:08 Apr 2024 17:27
    URI:https://strathprints.strath.ac.uk/id/eprint/18238
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