Kinetic phase diagram for island nucleation and growth during homoepitaxy

Mulheran, P.A. and Basham, M. (2008) Kinetic phase diagram for island nucleation and growth during homoepitaxy. Physical Review B, 77 (7). 075427-075432. ISSN 1098-0121 (http://dx.doi.org/10.1103/PhysRevB.77.075427)

Abstract

The impact of small-island dissociation and mobility on island nucleation and growth during vapor deposition of thin films is analyzed using mean field rate equations. The dominant island nucleation and growth mechanism is mapped onto a temperature/deposition-rate kinetic phase diagram, using Cu(100) homoepitaxy as an example. The methodology provides analytical expressions for the boundaries on the diagram and encourages a deeper understanding of the growth mechanisms. A kinetic Monte Carlo simulation incorporating the small-island dynamics is also presented and used to test the kinetic phase diagram, and satisfactory agreement is found throughout.

ORCID iDs

Mulheran, P.A. ORCID: https://orcid.org/0000-0002-9469-8010

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• Item metadata

  Item type:	Article
  ID code:	15113
  Dates:	Date Event 26 February 2008 Published
  Subjects:	Science > Physics > Solid state physics. Nanoscience
  Department:	Faculty of Engineering > Chemical and Process Engineering Unknown Department
  Depositing user:	Dr Paul A Mulheran
  Date deposited:	22 Jan 2010 15:37
  Last modified:	12 Dec 2024 02:20
  Related URLs:	Publisher
  URI:	https://strathprints.strath.ac.uk/id/eprint/15113