Kinetic phase diagram for island nucleation and growth during homoepitaxy
Mulheran, P.A. and Basham, M. (2008) Kinetic phase diagram for island nucleation and growth during homoepitaxy. Physical Review B, 77 (7). 075427-075432. ISSN 1098-0121 (http://dx.doi.org/10.1103/PhysRevB.77.075427)
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The impact of small-island dissociation and mobility on island nucleation and growth during vapor deposition of thin films is analyzed using mean field rate equations. The dominant island nucleation and growth mechanism is mapped onto a temperature/deposition-rate kinetic phase diagram, using Cu(100) homoepitaxy as an example. The methodology provides analytical expressions for the boundaries on the diagram and encourages a deeper understanding of the growth mechanisms. A kinetic Monte Carlo simulation incorporating the small-island dynamics is also presented and used to test the kinetic phase diagram, and satisfactory agreement is found throughout.
ORCID iDs
Mulheran, P.A. ORCID: https://orcid.org/0000-0002-9469-8010 and Basham, M.;-
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Item type: Article ID code: 15113 Dates: DateEvent26 February 2008PublishedSubjects: Science > Physics > Solid state physics. Nanoscience Department: Faculty of Engineering > Chemical and Process Engineering
Unknown DepartmentDepositing user: Dr Paul A Mulheran Date deposited: 22 Jan 2010 15:37 Last modified: 11 Nov 2024 09:06 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/15113