Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm

Smith, S.A. and Hopkins, J.M. and Hastie, J.E. and Burns, D. and Calvez, S. and Dawson, M.D. and Jouhti, T. and Kontinnen, J. and Pessa, M., Institution of Engineering and Technology (2004) Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm. Electronics Letters, 40 (15). pp. 935-937. ISSN 0013-5194 (http://dx.doi.org/10.1049/el:20045378)

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Abstract

What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.

ORCID iDs

Smith, S.A., Hopkins, J.M., Hastie, J.E. ORCID logoORCID: https://orcid.org/0000-0002-4066-7411, Burns, D., Calvez, S., Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Jouhti, T., Kontinnen, J. and Pessa, M.;
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