Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers

Bejtka, K. and Rizzi, F. and Edwards, P.R. and Martin, R.W. and Gu, E. and Dawson, M.D. and Watson, I.M. (2005) Growth and fabrication of gaN-based structures using aluminium indium nitride insertion layers. In: Annual Conference of the British Association for Crystal Growth, 2005-09-04 - 2005-09-06.

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Abstract

This speech was presented to the 2005 Annual Conference of the British Association for Crystal Growth, held in Sheffield on Sunday 4 - Tuesday 6 September 2005. The presentation focused on the design and growth of microcavities and the roles of AlInN layer in post-growth processing.

ORCID iDs

Edwards, P.R. ORCID: https://orcid.org/0000-0001-7671-7698

Martin, R.W. ORCID: https://orcid.org/0000-0002-6119-764X

Gu, E. ORCID: https://orcid.org/0000-0002-7607-9902

Dawson, M.D. ORCID: https://orcid.org/0000-0002-6639-2989

Watson, I.M. ORCID: https://orcid.org/0000-0002-8797-3993

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• Item metadata

  Item type:	Conference or Workshop Item(Speech)
  ID code:	9971
  Dates:	Date Event 2005 Published
  Subjects:	Science > Physics
  Department:	Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics
  Depositing user:	Strathprints Administrator
  Date deposited:	29 Jul 2011 13:33
  Last modified:	12 Dec 2024 16:10
  Related URLs:	Event
  URI:	https://strathprints.strath.ac.uk/id/eprint/9971