Stark manifold ultraviolet emission in Gd-implanted β -Ga 2 O 3 thin films
Williams, Martin S. and Elhajhasan, Mahmoud and Schowalter, Marco and Penman, Lewis and Karg, Alexander and Vogt, Patrick and Massabuau, Fabien C.-P. and Rosenauer, Andreas and Callsen, Gordon and Ronning, Carsten and Eickhoff, Martin and Alonso-Orts, Manuel (2025) Stark manifold ultraviolet emission in Gd-implanted β -Ga 2 O 3 thin films. Materials Today Physics, 54. 101731. ISSN 2542-5293 (https://doi.org/10.1016/j.mtphys.2025.101731)
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Abstract
Gadolinium (Gd) is a promising optically active lanthanide for UV emission. In this work, the optical emission properties of Gd-implanted monoclinic gallium oxide (β-Ga2O3) thin films are investigated. Second phase formation (γ-Ga2O3) is observed due to implantation-induced damage of the β-Ga2O3 lattice. Annealing the implanted films results in various β-Ga2O3 grain orientations. The relationship between the crystalline nature and the optical properties of the β-Ga2O3:Gd3+ films is studied. Optical activation occurs after annealing at 700°C, revealing a photoluminescence (PL) band at 3.92 eV. This emission is attributed to the 6P7∕2 → 8S7∕2 transition of Gd3+ in β-Ga2O3. Its four constituent emission components at 3.9118 eV, 3.9153 eV, 3.9221 eV and 3.9348 eV, due to the ion’s 6P7∕2 Stark splitting in the β-Ga2O3 crystal field, are investigated. The transition energies are independent of annealing temperature and film growth method, highlighting the insensitivity of the 4f7 orbital to minor changes in the monoclinic crystal environment.
ORCID iDs
Williams, Martin S., Elhajhasan, Mahmoud, Schowalter, Marco, Penman, Lewis

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Item type: Article ID code: 92762 Dates: DateEvent1 May 2025Published28 April 2025Published Online13 April 2025AcceptedSubjects: Science > Physics Department: Faculty of Science > Physics Depositing user: Pure Administrator Date deposited: 07 May 2025 07:56 Last modified: 07 May 2025 07:56 URI: https://strathprints.strath.ac.uk/id/eprint/92762