Sub-micron inGaN ring structures for high-efficiency LEDs

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Choi, H.W. and Edwards, P.R. and Liu, C. and Jeon, C.W. and Martin, R.W. and Watson, I.M. and Dawson, M.D. and Tripathy, P. and Chua, S.J. (2004) Sub-micron inGaN ring structures for high-efficiency LEDs. Physica Status Solidi C, 1 (2). pp. 202-205. ISSN 1610-1642 (http://dx.doi.org/10.1002/pssc.200303910)

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Abstract

A novel technique based on the Fresnel diffraction effect for the fabrication of sub-micron ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an external diameter of 1.5 m and a wall width of 500 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 5 nm blue shift observed in the cathodoluminescence spectra can be attributed to band-filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.

ORCID iDs

Choi, H.W., Edwards, P.R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Liu, C., Jeon, C.W., Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993, Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Tripathy, P. and Chua, S.J.;
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