Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser
Valentine, G.J. and Kemp, A. and Burns, D. and Balembois, F. and Georges, P. and Bernas, H. and Aron, A. and Aka, G. and Sibbett, W. and Brun, A. (2000) Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser. In: Conference on Lasers and Electro Optics Europe, 2000-09-10 - 2000-09-15. (Unpublished)
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Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser.
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Item type: Conference or Workshop Item(Paper) ID code: 9066 Dates: DateEvent2000PublishedNotes: AHR Subjects: Science > Physics > Optics. Light Department: Faculty of Science > Physics > Institute of Photonics Depositing user: Strathprints Administrator Date deposited: 26 Oct 2009 12:37 Last modified: 09 Apr 2024 04:56 URI: https://strathprints.strath.ac.uk/id/eprint/9066
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