Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser

Valentine, G.J. and Kemp, A. and Burns, D. and Balembois, F. and Georges, P. and Bernas, H. and Aron, A. and Aka, G. and Sibbett, W. and Brun, A. (2000) Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser. In: Conference on Lasers and Electro Optics Europe, 2000-09-10 - 2000-09-15. (Unpublished)

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Abstract

Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser.

ORCID iDs

Valentine, G.J., Kemp, A. ORCID logoORCID: https://orcid.org/0000-0002-1076-3138, Burns, D., Balembois, F., Georges, P., Bernas, H., Aron, A., Aka, G., Sibbett, W. and Brun, A.;
  • Item type:Conference or Workshop Item(Paper)
    ID code:9066
    Dates:
    Date
    Event
    2000
    Published
    Notes:AHR
    Keywords:ion implanted semiconductor, saturable-absorber mirror, modelocking, femtosecond, low threshold yb, YCOB laser, Optics. Light
    Subjects:Science > Physics > Optics. Light
    Department:Faculty of Science > Physics > Institute of Photonics
    Depositing user: Strathprints Administrator
    Date deposited:26 Oct 2009 12:37
    Last modified:18 Jan 2023 12:54
    URI:https://strathprints.strath.ac.uk/id/eprint/9066
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