Development of high average power picosecond laser systems
Burns, D. and Valentine, G.J. and Bente, E.A.J.M. and Ferguson, A.I.; Kudryashov, Alexis V., ed. (2003) Development of high average power picosecond laser systems. In: Laser resonators and beam control V: Proceedings SPIE 2002. SPIE, p. 129. ISBN 0819443689 (http://dx.doi.org/10.1117/12.469492)
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The use of semiconductor saturable absorbers has emerged as an enabling technology in modern passively modelocked laser systems. Their application to high power picosecond lasers, most notably Nd-doped lasers, has produced systems with average power levels of a few tens of watts. In this paper, the development of these laser systems to the 100W level and above will be outlined.
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Item type: Book Section ID code: 9017 Dates: DateEvent13 April 2003PublishedSubjects: Science > Physics > Optics. Light Department: Faculty of Science > Physics > Institute of Photonics
Unknown Department
Faculty of Science > PhysicsDepositing user: Strathprints Administrator Date deposited: 09 Nov 2009 12:07 Last modified: 11 Nov 2024 14:35 URI: https://strathprints.strath.ac.uk/id/eprint/9017