Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation

Sun, H.D. and Dawson, M.D. and Othman, M. and Yong, J.C.L. and Rorison, J.M. and Gilet, P. and Grenouillet, L. and Million, A. (2002) Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation. In: 26th International Conference on the Physics of Semiconductors, 2002-07-29 - 2002-08-02. (Unpublished)

Abstract

This paper is about the influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells. It was presented at the 26th International Conference on the Physics of Semiconductors in 2002.

ORCID iDs

Dawson, M.D. ORCID: https://orcid.org/0000-0002-6639-2989

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• Item metadata

  Item type:	Conference or Workshop Item(Paper)
  ID code:	9006
  Dates:	Date Event 2 August 2002 Published
  Subjects:	Science > Physics > Optics. Light
  Department:	Faculty of Science > Physics > Institute of Photonics
  Depositing user:	Strathprints Administrator
  Date deposited:	08 Nov 2009 13:47
  Last modified:	11 Nov 2024 16:16
  Related URLs:	http://www.iupap.org/commissions/c8/repo...
  URI:	https://strathprints.strath.ac.uk/id/eprint/9006