Processing of the n-face of GaN: thinning, etching and morphological control

Rizzi, F. and Bejtka, K. and Gu, E. and Dawson, M.D. and Semond, F. and Watson, I.M. and Martin, R.W. (2006) Processing of the n-face of GaN: thinning, etching and morphological control. In: International Workshop on Nitride Semiconductors, 2006-10-22 - 2006-10-27. (Unpublished)

Abstract

This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.

ORCID iDs

Gu, E. ORCID: https://orcid.org/0000-0002-7607-9902

Dawson, M.D. ORCID: https://orcid.org/0000-0002-6639-2989

Watson, I.M. ORCID: https://orcid.org/0000-0002-8797-3993

Martin, R.W. ORCID: https://orcid.org/0000-0002-6119-764X

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• Item metadata

  Item type:	Conference or Workshop Item(Paper)
  ID code:	8983
  Dates:	Date Event October 2006 Published
  Subjects:	Science > Physics > Optics. Light
  Department:	Faculty of Science > Physics > Institute of Photonics Faculty of Science > Physics
  Depositing user:	Strathprints Administrator
  Date deposited:	28 Oct 2009 12:39
  Last modified:	11 Nov 2024 16:19
  Related URLs:	http://cat.inist.fr/?aModele=afficheN&cp...
  URI:	https://strathprints.strath.ac.uk/id/eprint/8983