Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer

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Rizzi, F. and Edwards, P.R. and Bejtka, K. and Semond, F. and Gu, E. and Dawson, M.D. and Watson, I.M. and Martin, R.W. (2007) Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer. Superlattices and Microstructures, 41 (5-6). p. 414. (https://doi.org/10.1016/j.spmi.2007.03.031)

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Abstract

We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "upper" and "lower" silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.

ORCID iDs

Rizzi, F., Edwards, P.R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Bejtka, K., Semond, F., Gu, E. ORCID logoORCID: https://orcid.org/0000-0002-7607-9902, Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993 and Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X;
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