Towards a better understanding of trench defects in InGaN/GaN quantum wells

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Massabuau, F C-P and Trinh-Xuan, L and Lodié, D and Sahonta, S-L and Rhode, S and Thrush, E J and Oehler, F and Kappers, M J and Humphreys, C J and Oliver, R A (2013) Towards a better understanding of trench defects in InGaN/GaN quantum wells. Journal of Physics: Conference Series, 471. 012042. ISSN 1742-6588 (https://doi.org/10.1088/1742-6596/471/1/012042)

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Abstract

Trench defects are a commonly occurring feature in InGaN/GaN quantum well (QW) structures. This defect appears at the surface of a structure as a trench enclosing a region of material with peculiar emission properties. Transmission electron microscopy was used to characterise the sub-surface structure of such defect. It consists of a basal-plane stacking fault (BSF) located in the QW stack and bound by a vertical stacking mismatch boundary (SMB) which runs towards the surface and which opens up into pits, which merge to form a trench. Atomic force microscopy and cathodoluminescence were performed on the same individual defects in order to directly correlate the morphology with the emission properties. A strong correlation has been established between the thickness of the trench and the redshift and intensity of the emission of the enclosed region suggesting that bright trench defects emitting at a longer wavelength nucleate early during the growth. Data also suggest that the SMB may act as a non-radiative recombination centre.

ORCID iDs

Massabuau, F C-P ORCID logoORCID: https://orcid.org/0000-0003-1008-1652, Trinh-Xuan, L, Lodié, D, Sahonta, S-L, Rhode, S, Thrush, E J, Oehler, F, Kappers, M J, Humphreys, C J and Oliver, R A;
  • Item type:Article
    ID code:79530
    Dates:
    Date
    Event
    29 November 2013
    Published
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:10 Feb 2022 08:46
    Last modified:11 Nov 2024 13:23
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/79530
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