A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

Davies, Matthew J. and Dawson, Philip and Massabuau, Fabien C.-P. and Le Fol, Adrian and Oliver, Rachel A. and Kappers, Menno J. and Humphreys, Colin J. (2015) A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures. Physica Status Solidi B, 252 (5). pp. 866-872. ISSN 0370-1972 (https://doi.org/10.1002/pssb.201451535)

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Abstract

We report on the effects on the optical properties of blue-light emitting InGaN/GaN single- and multiple-quantum-well structures including a variety of prelayers. For each single-quantum-well structure containing a Si-doped prelayer, we measured a large blue shift of the photoluminescence peak energy and a significant increase in radiative recombination rate at 10 K. Calculations of the conduction and valence band energies show a strong reduction in the built-in electric field across the quantum well (QW) occurs when including Si-doped prelayers, due to enhancement of the surface polarization field which opposes the built-in field. The reduction in built-in field across the QW results in an increase in the electron–hole wavefunction overlap, increasing the radiative recombination rate, and a reduction in the strength of the quantum confined Stark effect, leading to the observed blue shift of the emission peak. The largest reduction of the built-in field occurred for an InGaN:Si prelayer, in which the additional InGaN/GaN interface of the prelayer, in close proximity to the QW, was shown to further reduce the built-in field. Study of multiple QW structures with and without an InGaN:Si prelayer showed the same mechanisms identified in the equivalent single-quantum-well structure.

ORCID iDs

Davies, Matthew J., Dawson, Philip, Massabuau, Fabien C.-P. ORCID logoORCID: https://orcid.org/0000-0003-1008-1652, Le Fol, Adrian, Oliver, Rachel A., Kappers, Menno J. and Humphreys, Colin J.;