Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches

Xu, Zongwei and Liu, Lei and He, Zhongdu and Tian, Dongyuan and Hartmaier, Alexander and Zhang, Junjie and Luo, Xichun and Rommel, Mathias and Nordlund, Kai and Zhang, Guoxiong and Fang, Fengzhou (2020) Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches. International Journal of Advanced Manufacturing Technology, 106. 3869–3880. ISSN 1433-3015 (https://doi.org/10.1007/s00170-019-04886-6)

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Abstract

Nanocutting mechanism of single crystal 6H-SiC is investigated through a novel scanning electron microscope setup in this paper. Various undeformed chip thicknesses on (0001) < 1–100 > orientation are adopted in the nanocutting experiments. Phase transformation and dislocation activities involved in the 6H-SiC nanocutting process are also characterized and analyzed. Two methods of stress-assisted and ion implant-assisted nanocutting are studied to improve 6H-SiC ductile machining ability. Results show that stress-assisted method can effectively decrease the hydrostatic stress and help to activate dislocation motion and ductile machining; ion implant-induced damages are helpful to improve the ductile machining ability from MD simulation and continuous nanocutting experiments under the online observation platform.

ORCID iDs

Xu, Zongwei, Liu, Lei, He, Zhongdu, Tian, Dongyuan, Hartmaier, Alexander, Zhang, Junjie, Luo, Xichun ORCID logoORCID: https://orcid.org/0000-0002-5024-7058, Rommel, Mathias, Nordlund, Kai, Zhang, Guoxiong and Fang, Fengzhou;
CORE (COnnecting REpositories)