Acceptor state anchoring in gallium nitride

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Cameron, D. and O'Donnell, K.P. and Edwards, P.R. and Peres, M. and Lorenz, K. and Kappers, M.J. and Boćkowski, M. (2020) Acceptor state anchoring in gallium nitride. Applied Physics Letters, 116 (10). 102105. ISSN 0003-6951 (https://doi.org/10.1063/1.5142168)

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Abstract

The dual nature of the magnesium acceptor in gallium nitride results in dynamic defect complexes. Europium spectator ions reveal switching between two spectrally unique metastable centres, each corresponding to a particular acceptor state. By ion co-implantation of europium and oxygen into GaN(Mg), we produce, in addition, an anchored state system. In doing so we create an abundance of previously unidentified stable centres which we denote as "Eu0(Ox)". We introduce a microscopic model for these centres with oxygen substituting for nitrogen in the bridging site.

ORCID iDs

Cameron, D., O'Donnell, K.P. ORCID logoORCID: https://orcid.org/0000-0003-3072-3675, Edwards, P.R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Peres, M., Lorenz, K., Kappers, M.J. and Boćkowski, M.;
  • Item type:Article
    ID code:71643
    Dates:
    Date
    Event
    9 March 2020
    Published
    21 February 2020
    Accepted
    28 January 2020
    Submitted
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:03 Mar 2020 12:18
    Last modified:30 Dec 2024 01:20
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/71643
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