Carrier localization in the vicinity of dislocations in InGaN

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Massabuau, F. C-P. and Chen, P. and Horton, M. K. and Rhode, S. L. and Ren, C. X. and O'Hanlon, T. J. and Kovács, A. and Kappers, M. J. and Humphreys, C. J. and Dunin-Borkowski, R. E. and Oliver, R. A. (2017) Carrier localization in the vicinity of dislocations in InGaN. Journal of Applied Physics, 121 (1). 013104. ISSN 0021-8979 (https://doi.org/10.1063/1.4973278)

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Abstract

We present a multi-microscopy study of dislocations in InGaN, whereby the same threading dislocation was observed under several microscopes (atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and spectroscopy, transmission electron microscopy), and its morphological optical and structural properties directly correlated. We achieved this across an ensemble of defects large enough to be statistically significant. Our results provide evidence that carrier localization occurs in the direct vicinity of the dislocation through the enhanced formation of In-N chains and atomic condensates, thus limiting non-radiative recombination of carriers at the dislocation core. We highlight that the localization properties in the vicinity of threading dislocations arise as a consequence of the strain field of the individual dislocation and the additional strain field building between interacting neighboring dislocations. Our study therefore suggests that careful strain and dislocation distribution engineering may further improve the resilience of InGaN-based devices to threading dislocations. Besides providing a new understanding of dislocations in InGaN, this paper presents a proof-of-concept for a methodology which is relevant to many problems in materials science.

ORCID iDs

Massabuau, F. C-P. ORCID logoORCID: https://orcid.org/0000-0003-1008-1652, Chen, P., Horton, M. K., Rhode, S. L., Ren, C. X., O'Hanlon, T. J., Kovács, A., Kappers, M. J., Humphreys, C. J., Dunin-Borkowski, R. E. and Oliver, R. A.;
  • Item type:Article
    ID code:69871
    Dates:
    Date
    Event
    3 January 2017
    Published
    31 December 2016
    Accepted
    Notes:This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Massabuau, F, Chen, P, Horton, MK, Rhode, SL, Ren, CX, O'Hanlon, TJ, Kovacs, A, Kappers, MJ, Humphreys, CJ, Dunin-Borkowski, RE & Oliver, RA 2017, 'Carrier localization in the vicinity of dislocations in InGaN' Journal of Applied Physics, vol. 121, no. 013104 and may be found at https://doi.org/10.1063/1.4973278.
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:20 Sep 2019 12:02
    Last modified:12 Dec 2024 08:39
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/69871
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