Electron counting in a silicon single-electron pump

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Tanttu, Tuomo and Rossi, Alessandro and Tan, Kuan Yen and Huhtinen, Kukka Emilia and Chan, Kok Wai and Möttönen, Mikko and Dzurak, Andrew S. (2015) Electron counting in a silicon single-electron pump. New Journal of Physics, 17 (10). 103030. ISSN 1367-2630 (https://doi.org/10.1088/1367-2630/17/10/103030)

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Abstract

We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in excess of 80 pA with uncertainty below 30 parts per million. Single-shot detection of electrons pumped into a reservoir dot is performed using a capacitively coupled single-electron transistor. We extract the full probability distribution of the transfer of n electrons per pumping cycle for We find that the probabilities extracted from the counting experiment are in agreement with direct current measurements in a broad range of dc electrochemical potentials of the pump. The electron counting technique is also used to confirm the improving robustness of the pumping mechanism with increasing electrostatic confinement of the quantum dot.

ORCID iDs

Tanttu, Tuomo, Rossi, Alessandro ORCID logoORCID: https://orcid.org/0000-0001-7935-7560, Tan, Kuan Yen, Huhtinen, Kukka Emilia, Chan, Kok Wai, Möttönen, Mikko and Dzurak, Andrew S.;
  • Item type:Article
    ID code:68708
    Dates:
    Date
    Event
    16 October 2015
    Published
    23 September 2015
    Accepted
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:03 Jul 2019 16:26
    Last modified:21 Dec 2024 01:19
    Related URLs:
    URI:https://strathprints.strath.ac.uk/id/eprint/68708
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