Investigation of influence of tool rake angle in single point diamond turning of silicon

Mir, Amir and Luo, Xichun and Cheng, Kai and Cox, Andrew (2017) Investigation of influence of tool rake angle in single point diamond turning of silicon. International Journal of Advanced Manufacturing Technology. ISSN 1433-3015 (https://doi.org/10.1007/s00170-017-1021-7)

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Abstract

This paper presents an investigation of the effect of tool rake angle in single point diamond turning (SPDT) of silicon using experimental and simulation methods. Machining trials under the same cutting conditions were carried out using three different rake angle tools. In order to delve further into the rake angle effect on the output parameters including material removal, stresses, and crack formation, at the onset of chip formation and steady-state conditions, a simulation study using smoothed particle hydrodynamics (SPH) approach was performed. The simulations results were incorporated and found in good agreement with experimental observations. The results indicate that diamond tool wear rate and surface generation mechanism significantly vary using different rake angle tools. The continuance of compressive and shear deformation sequence at the chip incipient stage governs the high-pressure phase transformation (HPPT) as a function of rake angle and tool wear. The capability of diamond tool to maintain this sequence and required hydrostatic pressure under worn conditions is highly influenced by a change in rake angle. The proportional relationship of cutting forces magnitude and tool wear also differs owing to disparate wear pattern which influence distribution of stresses and uniform hydrostatic pressure under the tool cutting edge. This subsequently influences structural phase transformation and therefore frictional resistance to cutting. Mainly frictional groove wear was found dominant for all diamond tools in machining of silicon.

ORCID iDs

Mir, Amir ORCID logoORCID: https://orcid.org/0000-0002-8420-2798, Luo, Xichun ORCID logoORCID: https://orcid.org/0000-0002-5024-7058, Cheng, Kai and Cox, Andrew;