Aluminium oxide prepared by atomic layer deposition in organic thin-film transistors operating at 2 V : comparison with UV-ozone oxidation

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Hannah, Stuart and Gleskova, Helena (2014) Aluminium oxide prepared by atomic layer deposition in organic thin-film transistors operating at 2 V : comparison with UV-ozone oxidation. In: 56th Electronics Materials Conference, 2014-06-25 - 2014-06-27, University of California.

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Abstract

Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid (C8PA) monolayer prepared by vacuum evaporation has been developed for organic thin-film transistors (OTFTs) based on pentacene. Here we compare such OTFTs to similar transistors that incorporate ALD-AlOx/C8PA bi-layer. In addition, a 12.9-nm-thick ALD-AlOx exposed to UV-ozone for 60 minutes was incorporated into OTFTs based on dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT).

ORCID iDs

Hannah, Stuart ORCID logoORCID: https://orcid.org/0000-0001-5620-9899 and Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639;
CORE (COnnecting REpositories)