Transfer printing of semiconductor nanowires with lasing emission for controllable nanophotonic device fabrication

Guilhabert, Benoit and Hurtado, Antonio and Jevtics, Dimitars and Gao, Qiang and Tan, Hark Hoe and Jagadish, Chennupati and Dawson, Martin D. (2016) Transfer printing of semiconductor nanowires with lasing emission for controllable nanophotonic device fabrication. ACS Nano, 10 (4). 3951–3958. ISSN 1936-0851 (https://doi.org/10.1021/acsnano.5b07752)

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Abstract

Accurate positioning and organization of Indium Phosphide (InP) Nanowires (NW) with lasing emission at room temperature is achieved using a nanoscale Transfer Printing (TP) technique. The NWs retained their lasing emission after their transfer to targeted locations on different receiving substrates (e.g. polymers, silica and metal surfaces). The NWs were also organized into complex spatial patterns, including 1D and 2D arrays, with a controlled number of elements and dimensions. The developed TP technique enables the fabrication of bespoke nanophotonic systems using NW lasers and other NW devices as building blocks.

ORCID iDs

Guilhabert, Benoit ORCID logoORCID: https://orcid.org/0000-0002-3986-8566, Hurtado, Antonio ORCID logoORCID: https://orcid.org/0000-0002-4448-9034, Jevtics, Dimitars ORCID logoORCID: https://orcid.org/0000-0002-6678-8334, Gao, Qiang, Tan, Hark Hoe, Jagadish, Chennupati and Dawson, Martin D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989;