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CdSxSe1-x/ZnS semiconductor nanocrystal laser with sub 10kW/cm² threshold and 40nJ emission output at 600 nm

McLellan, Luke Jonathan and Guilhabert, Benoit and Laurand, Nicolas and Dawson, Martin D. (2016) CdSxSe1-x/ZnS semiconductor nanocrystal laser with sub 10kW/cm² threshold and 40nJ emission output at 600 nm. Optics Express, 24 (2). ISSN 1094-4087

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Abstract

A colloidal quantum dot laser emitting at 600 nm with a sub 10kW/cm2 threshold at 5ns pulse pumping is reported. The device has a second order distributed feedback cavity for vertical emission and incorporates a bilayer planar waveguide structure based on a film of yellow-orange alloyed-core/shell CdSxSe1-x/ZnS quantum dots over-coated with polyvinyl alcohol. A study of the amplified spontaneous regime indicates that the quantum dot gain region behaves like a quasi-three level system and that the bilayer structure design increases the modal gain compared to a single layer of quantum dots. An output of 40nJ per pulse is measured for a total pump-to-signal efficiency above threshold of 3%.

Item type: Article
ID code: 54855
Notes: © 2015 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
Keywords: semiconductor nanocrystal laser, quantum dots, CdSxSe1-x/ZnS , Optics. Light, Atomic and Molecular Physics, and Optics
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Physics
Faculty of Science > Physics > Institute of Photonics
Technology and Innovation Centre > Photonics
Depositing user: Pure Administrator
Date deposited: 11 Dec 2015 01:49
Last modified: 17 Mar 2019 11:18
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URI: https://strathprints.strath.ac.uk/id/eprint/54855
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