Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

Kruczek, T. and Leyman, R. and Carnegie, D. and Bazieva, N. and Erbert, G. and Schulz, S. and Reardon, C. and Reynolds, S. and Rafailov, E. U. (2012) Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. Applied Physics Letters, 101 (8). 081114. ISSN 0003-6951

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    Abstract

    Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals’ difference frequency ~1 THz.