Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy

Tools

Sun, H.D. and Calvez, S. and Dawson, M.D. and Gilet, P. and Grenouillet, L. and Million, A. (2005) Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy. Applied Physics A: Materials Science and Processing, 80 (1). pp. 9-12. ISSN 0947-8396 (http://www.10.1007/s00339-004-2985-3)

Full text not available in this repository.Request a copy

Abstract

We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-m wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-m material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 m. The related radiative mechanisms in the 1.5-m samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.

ORCID iDs

Sun, H.D., Calvez, S., Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Gilet, P., Grenouillet, L. and Million, A.;
CORE (COnnecting REpositories)