Electrical response of amorphous silicon thin-film transistors under mechanical strain

Gleskova, H. and Wagner, S. and Soboyejo, W. and Suo, Z. (2002) Electrical response of amorphous silicon thin-film transistors under mechanical strain. Journal of Applied Physics, 92 (10). pp. 6224-6229. ISSN 0021-8979 (https://doi.org/10.1063/1.1513187)

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Abstract

We evaluated amorphous silicon thin-film transistors (TFTs) fabricated on polyimide foil under uniaxial compressive or tensile strain. The strain was induced by bending or stretching. The on- current and hence the electron linear mobility µ depend on strain as µ = µ0(1 + 26E), where tensile strain has a positive sign and the strain is parallel to the TFT source-drain current path. Upon the application of compressive or tensile strain the mobility changes "instantly" and under compression then remains constant for up to 40 h. In tension, the TFTs fail mechanically at a strain of about +0.003 but recover if the strain is released "immediately."

ORCID iDs

Gleskova, H. ORCID logoORCID: https://orcid.org/0000-0001-7195-9639, Wagner, S., Soboyejo, W. and Suo, Z.;
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