Investigation of the structural, optical and electrical properties of Cu3BiS3 semiconducting thin films

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Yakushev, M.V. and Maiello, P. and Raadik, T. and Shaw, M.J. and Edwards, P.R. and Krustok, J. and Mudryi, A.V. and Forbes, I. and Martin, R.W. (2014) Investigation of the structural, optical and electrical properties of Cu3BiS3 semiconducting thin films. Energy Procedia, 60. pp. 166-172. ISSN 1876-6102 (https://doi.org/10.1016/j.egypro.2014.12.359)

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Abstract

The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24 eV and EgY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.

ORCID iDs

Yakushev, M.V., Maiello, P., Raadik, T., Shaw, M.J. ORCID logoORCID: https://orcid.org/0000-0002-7625-5224, Edwards, P.R. ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, Krustok, J., Mudryi, A.V., Forbes, I. and Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X;
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