Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor
Borghesi, Alessandro and Giardini, Mario Ettore and Marazzi, Marco and Sassella, Adele and De Santi, Giorgio (1997) Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor. Applied Physics Letters, 70 (7). pp. 892-894. ISSN 0003-6951
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Abstract
The optical functions of amorphous and polycrystalline silicon thin films deposited on single oxidized silicon substrates by chemical vapor deposition in a wide range of deposition temperatures have been determined using spectroscopic ellipsometry. The data analysis is performed by direct inversion of the experimental spectra, therefore, obtaining results independent of any film modeling. The optical results indicate that the film structure changes as the deposition temperature increases from amorphous to polycrystalline with different grain size and distribution.
Creators(s): |
Borghesi, Alessandro, Giardini, Mario Ettore ![]() | Item type: | Article |
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ID code: | 47624 |
Keywords: | ellipsometric characterization, amorphous, polycrystalline silicon films, single wafer reactor, optical functions, single oxidizedsilicon substrates, deposition temperatures, spectroscopicellipsometry, silicon, polycrystals, thin films, amorphous semiconductors, thin film deposition, Bioengineering, Optics. Light, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Biomedical Engineering |
Subjects: | Technology > Engineering (General). Civil engineering (General) > Bioengineering Science > Physics > Optics. Light |
Department: | Faculty of Engineering > Biomedical Engineering |
Depositing user: | Pure Administrator |
Date deposited: | 24 Apr 2014 09:16 |
Last modified: | 23 Jan 2021 03:01 |
URI: | https://strathprints.strath.ac.uk/id/eprint/47624 |
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