Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor

Borghesi, Alessandro and Giardini, Mario Ettore and Marazzi, Marco and Sassella, Adele and De Santi, Giorgio (1997) Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor. Applied Physics Letters, 70 (7). pp. 892-894. ISSN 0003-6951

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    Abstract

    The optical functions of amorphous and polycrystalline silicon thin films deposited on single oxidized silicon substrates by chemical vapor deposition in a wide range of deposition temperatures have been determined using spectroscopic ellipsometry. The data analysis is performed by direct inversion of the experimental spectra, therefore, obtaining results independent of any film modeling. The optical results indicate that the film structure changes as the deposition temperature increases from amorphous to polycrystalline with different grain size and distribution.

    Creators(s): Borghesi, Alessandro, Giardini, Mario Ettore ORCID logoORCID: https://orcid.org/0000-0003-4849-9683, Marazzi, Marco, Sassella, Adele and De Santi, Giorgio;
    Item type:Article
    ID code:47624
    Keywords:ellipsometric characterization, amorphous, polycrystalline silicon films, single wafer reactor, optical functions, single oxidizedsilicon substrates, deposition temperatures, spectroscopicellipsometry, silicon, polycrystals, thin films, amorphous semiconductors, thin film deposition, Bioengineering, Optics. Light, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Biomedical Engineering
    Subjects:Technology > Engineering (General). Civil engineering (General) > Bioengineering
    Science > Physics > Optics. Light
    Department:Faculty of Engineering > Biomedical Engineering
    Depositing user: Pure Administrator
    Date deposited:24 Apr 2014 09:16
    Last modified:23 Jan 2021 03:01
    URI:https://strathprints.strath.ac.uk/id/eprint/47624
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