Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor

Borghesi, Alessandro and Giardini, Mario Ettore and Marazzi, Marco and Sassella, Adele and De Santi, Giorgio (1997) Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor. Applied Physics Letters, 70 (7). pp. 892-894. ISSN 0003-6951

PDF (Appl Phys Lett 70) Appl_Phys_Lett_70_892.pdf Final Published Version Download (309kB)

Abstract

The optical functions of amorphous and polycrystalline silicon thin films deposited on single oxidized silicon substrates by chemical vapor deposition in a wide range of deposition temperatures have been determined using spectroscopic ellipsometry. The data analysis is performed by direct inversion of the experimental spectra, therefore, obtaining results independent of any film modeling. The optical results indicate that the film structure changes as the deposition temperature increases from amorphous to polycrystalline with different grain size and distribution.