Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state

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Lorenz, K. and Franco, N. and Alves, E. and Watson, I.M. and Martin, R.W. and O'Donnell, K.P. (2006) Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state. Physical Review Letters, 97. 085501. ISSN 1079-7114 (http://dx.doi.org/10.1103/PhysRevLett.97.085501)

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Abstract

Monte Carlo simulations of anomalous ion channeling in near-lattice-matched AlInN/GaN bilayers allow an accurate determination of the strain state of AlInN by Rutherford backscattering or channeling. Although these strain estimates agree well with x-ray diffraction (XRD) results, XRD composition estimates are shown to have limited accuracy, due to a possible deviation from Vegard's law, which we quantify for this alloy. As the InN fraction increases from 13% to 19%, the strain in AlInN films changes from tensile to compressive with lattice matching predicted to occur at [InN]=17.1%.

ORCID iDs

Lorenz, K., Franco, N., Alves, E., Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993, Martin, R.W. ORCID logoORCID: https://orcid.org/0000-0002-6119-764X and O'Donnell, K.P. ORCID logoORCID: https://orcid.org/0000-0003-3072-3675;
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