Quantum electron beam probe of sidewall dry-etch damage

Rahman, M and Williamson, JG and Mathieson, K and Dick, G and Brown, MJ and Duffy, S and Wilkinson, CDW (2000) Quantum electron beam probe of sidewall dry-etch damage. Microelectronic Engineering, 53 (1-4). pp. 371-374. ISSN 0167-9317 (https://doi.org/10.1016/S0167-9317(00)00336-1)

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Abstract

Damage as a result of ion bombardment may occur both at top surfaces and at sidewalls. We propose a method of probing sidewall damage using coherent electron focusing. A collimated electron beam is reflected off an internal boundary formed by dry etching. Spectra measured in an applied magnetic field are influenced strongly by increased levels of etch damage. Monte Carlo simulations combined with experiments on multiple beams reveal the separate contributions of boundary roughness and inelastic electron scattering. Electrostatic calculations reveal a damage shadow beneath the sidewall.

ORCID iDs

Rahman, M, Williamson, JG, Mathieson, K ORCID logoORCID: https://orcid.org/0000-0002-9517-8076, Dick, G, Brown, MJ, Duffy, S and Wilkinson, CDW;
  • Item type:Article
    ID code:37554
    Dates:
    Date
    Event
    1 June 2000
    Published
    Notes:25th International Conference on Micro- and Nano-Engineering, ROME, ITALY, SEP 21-23, 1999
    Subjects:Science > Physics > Optics. Light
    Department:Faculty of Science > Physics > Institute of Photonics
    Depositing user: Pure Administrator
    Date deposited:09 Feb 2012 16:36
    Last modified:11 Nov 2024 10:04
    URI:https://strathprints.strath.ac.uk/id/eprint/37554
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