The simulation of charge sharing in semiconductor X-ray pixel detectors

Mathieson, K and Bates, R and O'Shea, V and Passmore, MS and Rahman, M and Smith, KM and Watt, J and Whitehill, C (2002) The simulation of charge sharing in semiconductor X-ray pixel detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 477 (1-3). pp. 191-197. ISSN 0168-9002 (https://doi.org/10.1016/S0168-9002(01)01894-0)

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Abstract

Two simulation packages were used to model the sharing of charge, due to the scattering and diffusion of carriers, between adjacent pixel elements in semiconductors X-ray detectors. The X-ray interaction and the consequent multiple scattering was modelled with the aid of the Monte Carlo package, MCNP. The resultant deposited charge distribution was then used to create the charge cloud profile in the finite element semiconductor simulation code MEDICI. The analysis of the current pulses induced on pixel electrodes for varying photon energies was performed for a GaAs pixel detector. For a pixel pitch of 25 μm, the charge lost to a neighbouring pixel was observed to be constant, at 0.6%, through the energies simulated. Ultimately, a fundamental limit on the pixel element size for imaging and spectroscopic devices may be set due to these key physical principles.

  • Item type:Article
    ID code:37541
    Dates:
    Date
    Event
    21 January 2002
    Published
    Notes:5th International Conference on Position-Sensitive Detectors, UNIV COLL LONDON, LONDON, ENGLAND, SEP 13-17, 1999
    Subjects:Medicine > Therapeutics. Pharmacology
    Department:Faculty of Science > Physics > Institute of Photonics
    Depositing user: Pure Administrator
    Date deposited:09 Feb 2012 16:02
    Last modified:08 Apr 2024 19:49
    URI:https://strathprints.strath.ac.uk/id/eprint/37541
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