Electrophotographic patterning of thin-film silicon on glass foil

Gleskova, H. and Wagner, S. and Shen, D. S. (1995) Electrophotographic patterning of thin-film silicon on glass foil. IEEE Electron Device Letters, 16 (10). pp. 418-420. (https://doi.org/10.1109/55.464803)

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Abstract

We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on approx.50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

ORCID iDs

Gleskova, H. ORCID logoORCID: https://orcid.org/0000-0001-7195-9639, Wagner, S. and Shen, D. S.;
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