Amorphous silicon thin-film transistors on compliant polyimide foil substrates

Gleskova, Helena and Wagner, Sigurd (1999) Amorphous silicon thin-film transistors on compliant polyimide foil substrates. IEEE Electron Device Letters, 20 (9). pp. 473-475. (https://doi.org/10.1109/55.784456)

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Abstract

Much of the mechanical strain in semiconductor devices can be relieved when they are made on compliant substrates. We demonstrate this strain relief with amorphous silicon thin-film transistors made on 25-μm thick polyimide foil, which can be bent to radii of curvature R down to 0.5 mm without substantial change in electrical characteristics.

ORCID iDs

Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639 and Wagner, Sigurd;
CORE (COnnecting REpositories)