Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability

Kattamis, Alex Z. and Cherenack, Kunigunde H. and Hekmatshoar, Bahman and Cheng, I. Chun and Gleskova, Helena and Sturm, James C. and Wagner, Sigard (2007) Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability. IEEE Electron Device Letters, 28 (7). pp. 606-608. (https://doi.org/10.1109/LED.2007.900078)

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Abstract

The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power density between 22 and 110 mW/cm2 and temperature between 150C and 300C. The time needed to shift the threshold voltage by 2 V varies by a factor of 12 between low power and low temperature, and high power and high temperature. These results highlight the importance of fabricating a-Si:H TFTs on flexible plastic with the SiNx gate dielectric deposited at the highest possible power and temperature.

ORCID iDs

Kattamis, Alex Z., Cherenack, Kunigunde H., Hekmatshoar, Bahman, Cheng, I. Chun, Gleskova, Helena ORCID logoORCID: https://orcid.org/0000-0001-7195-9639, Sturm, James C. and Wagner, Sigard;
CORE (COnnecting REpositories)