Power device gate driver circuit with reduced number of isolation transformers for switched reluctance machine drive

McNeill, Neville and Holliday, Derrick and Mellor, Philip (2009) Power device gate driver circuit with reduced number of isolation transformers for switched reluctance machine drive. IEEE Transactions on Power Electronics, 24 (2). pp. 548-552. ISSN 0885-8993 (https://doi.org/10.1109/TPEL.2008.2006610)

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Abstract

The combined asymmetric half-bridge power converter topology is often used to drive switched reluctance machines (SRMs). This letter describes a transformer-isolated power semiconductor gate driver circuit that uses only two transformers to supply all three power devices in a combined asymmetric half bridge with local power supplies and drive signals. Therefore, the entire gate driver circuitry for a six-switch converter driving a four-phase SRM requires only four isolation transformers, thereby reducing cost. Operation of a prototype circuit is demonstrated.

ORCID iDs

McNeill, Neville, Holliday, Derrick ORCID logoORCID: https://orcid.org/0000-0002-6561-4535 and Mellor, Philip;
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