Electron probe microanalysis of rare earth doped gallium nitride light emitters

Dalmasso, S and Martin, R W and Edwards, P R and O'Donnell, K P and Pipeleers, B and Vantomme, A and Nakanishi, Y and Wakahara, A and Yoshida, A, RENiBEI Network (2003) Electron probe microanalysis of rare earth doped gallium nitride light emitters. Journal of Physics: Conference Series, 180. pp. 555-558. ISSN 1742-6596

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Abstract

Rare earth doped GaN structures offer potential for optical devices emitting in the visible spectral region. Doping with europium and erbium produces characteristic sharp red and green emission lines respectively, due to intra-4f(n) shell electron transitions. We describe studies of Eu- and Er- ion implanted MOCVD grown GaN epilayers on sapphire using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Wavelength dispersive X-ray analysis is shown to be an accurate technique for quantifying rare earth concentrations in GaN, down to similar to0.06 atomic % and is complemented by CL acquired at the same time from the same microscopic region of sample.

ORCID iDs

Dalmasso, S, Martin, R W ORCID logoORCID: https://orcid.org/0000-0002-6119-764X, Edwards, P R ORCID logoORCID: https://orcid.org/0000-0001-7671-7698, O'Donnell, K P ORCID logoORCID: https://orcid.org/0000-0003-3072-3675, Pipeleers, B, Vantomme, A, Nakanishi, Y, Wakahara, A and Yoshida, A;
  • Item type:Article
    ID code:30539
    Dates:
    Date
    Event
    2003
    Published
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:18 May 2011 15:19
    Last modified:11 Nov 2024 09:43
    URI:https://strathprints.strath.ac.uk/id/eprint/30539
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