Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation
Jamison, S.P. and Ersfeld, B. and Jaroszynski, D.A. (2004) Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation. Current Applied Physics, 4 (2-4). pp. 217-220. ISSN 1567-1739 (http://dx.doi.org/10.1016/j.cap.2003.11.013)
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Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.
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Item type: Article ID code: 18238 Dates: DateEventApril 2004PublishedSubjects: Science > Physics Department: Faculty of Science > Physics Depositing user: Strathprints Administrator Date deposited: 01 Apr 2010 13:34 Last modified: 08 Apr 2024 17:27 URI: https://strathprints.strath.ac.uk/id/eprint/18238