Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation

Jamison, S.P. and Ersfeld, B. and Jaroszynski, D.A. (2004) Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation. Current Applied Physics, 4 (2-4). pp. 217-220. ISSN 1567-1739 (http://dx.doi.org/10.1016/j.cap.2003.11.013)

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Abstract

Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.

ORCID iDs

Jamison, S.P., Ersfeld, B. ORCID logoORCID: https://orcid.org/0000-0001-5597-9429 and Jaroszynski, D.A. ORCID logoORCID: https://orcid.org/0000-0002-3006-5492;
  • Item type:Article
    ID code:18238
    Dates:
    Date
    Event
    April 2004
    Published
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Strathprints Administrator
    Date deposited:01 Apr 2010 13:34
    Last modified:11 Nov 2024 09:17
    URI:https://strathprints.strath.ac.uk/id/eprint/18238
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