Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm
Smith, S.A. and Hopkins, J.M. and Hastie, J.E. and Burns, D. and Calvez, S. and Dawson, M.D. and Jouhti, T. and Kontinnen, J. and Pessa, M., Institution of Engineering and Technology (2004) Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm. Electronics Letters, 40 (15). pp. 935-937. ISSN 0013-5194 (http://dx.doi.org/10.1049/el:20045378)
Full text not available in this repository.Request a copyAbstract
What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.
ORCID iDs
Smith, S.A., Hopkins, J.M., Hastie, J.E.

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Item type: Article ID code: 10012 Dates: DateEvent22 July 2004PublishedKeywords: diamond, elemental semiconductors, gallium arsenide, gallium compounds, indium compounds, laser mirrors, microchip lasers, surface emitting lasers, wide band gap semiconductors, Physics, Electrical and Electronic Engineering Subjects: Science > Physics Department: Faculty of Science > Physics
Faculty of Science > Physics > Institute of PhotonicsDepositing user: Strathprints Administrator Date deposited: 12 May 2010 10:17 Last modified: 14 Sep 2023 15:57 URI: https://strathprints.strath.ac.uk/id/eprint/10012