Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm

Smith, S.A. and Hopkins, J.M. and Hastie, J.E. and Burns, D. and Calvez, S. and Dawson, M.D. and Jouhti, T. and Kontinnen, J. and Pessa, M., Institution of Engineering and Technology (2004) Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm. Electronics Letters, 40 (15). pp. 935-937. ISSN 0013-5194

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Abstract

What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.

ORCID iDs

Smith, S.A., Hopkins, J.M., Hastie, J.E. ORCID logoORCID: https://orcid.org/0000-0002-4066-7411, Burns, D., Calvez, S., Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Jouhti, T., Kontinnen, J. and Pessa, M.;
  • Item type:Article
    ID code:10012
    Dates:
    Date
    Event
    22 July 2004
    Published
    Keywords:diamond, elemental semiconductors, gallium arsenide, gallium compounds, indium compounds, laser mirrors, microchip lasers, surface emitting lasers, wide band gap semiconductors, Physics, Electrical and Electronic Engineering
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Faculty of Science > Physics > Institute of Photonics
    Depositing user: Strathprints Administrator
    Date deposited:12 May 2010 10:17
    Last modified:20 Jan 2021 17:49
    URI:https://strathprints.strath.ac.uk/id/eprint/10012
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