Spiking flip-flop memory in resonant tunnelling diode neurons
Donati, Giovanni and Owen-Newns, Dafydd and Robertson, Joshua and Malysheva, Ekaterina and Adair, Andrew and Figueiredo, Jose and Romeira, Bruno and Dolores-Calzadilla, Victor and Hurtado, Antonio (2024) Spiking flip-flop memory in resonant tunnelling diode neurons. Physical Review Letters. ISSN 1079-7114 (In Press)
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Abstract
We report a spiking flip-flop memory mechanism allowing to controllably switch between neural-like excitable spike-firing and quiescent dynamics in a resonant tunneling diode (RTD) neuron under low-amplitude (<150 mV pulses) and high-speed (ns-rates) inputs pulses. We also show that the timing of the set-reset input pulses is critical to elicit switching responses between spiking and quiescent regimes in the system. The demonstrated flip-flop spiking memory, in which spiking regimes can be controllably excited, stored and inhibited in RTD-neurons, via specific low-amplitude, high speed signals (delivered at proper time instants) offers high promise for RTD-based spiking neural networks, with potentials to extend further to optoelectronic implementations where RTD neurons and RTD memory elements are deployed alongside for fast and efficient photonic-electronic neuromorphic computing and Artificial Intelligence (AI) hardware.
ORCID iDs
Donati, Giovanni, Owen-Newns, Dafydd, Robertson, Joshua, Malysheva, Ekaterina, Adair, Andrew, Figueiredo, Jose, Romeira, Bruno, Dolores-Calzadilla, Victor and Hurtado, Antonio ORCID: https://orcid.org/0000-0002-4448-9034;-
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Item type: Article ID code: 91265 Dates: DateEvent18 November 2024Published18 November 2024AcceptedSubjects: Science > Physics Department: Faculty of Science > Physics > Institute of Photonics
Faculty of Science > PhysicsDepositing user: Pure Administrator Date deposited: 26 Nov 2024 10:27 Last modified: 26 Nov 2024 10:27 Related URLs: URI: https://strathprints.strath.ac.uk/id/eprint/91265