Efficient Forster transfer mediated by excitons in InGaN/GaN quantum well/polyfluorene heterostructures

Itskos, G. and Heliotis, G. and Belton, C. and Watson, I.M. and Dawson, M.D. and Bradley, D.D.C. and Murray, R. (2007) Efficient Forster transfer mediated by excitons in InGaN/GaN quantum well/polyfluorene heterostructures. American Institute of Physics Conference Proceedings, 893 (1). pp. 355-356. ISSN 1551-7616

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Abstract

We report on novel InGaN/GaN quantum well/polyfluorene heterostructures where efficient Förster energy transfer from the well to the organic layer occurs. We show that Mott-Wannier excitons dominate the quantum well luminescence in the quantum wells in the 77 to at least 225 K range and are responsible for the efficient energy channeling to the polyfluorene films.

Creators(s): Itskos, G., Heliotis, G., Belton, C., Watson, I.M. ORCID logoORCID: https://orcid.org/0000-0002-8797-3993, Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Bradley, D.D.C. and Murray, R.;
Item type:Article
ID code:9112
Keywords:semiconductor quantum wells, indium compounds, gallium compounds, nitrogen compounds, organic semiconductors, polymer films, excitons, luminescence, Optics. Light, Physics and Astronomy(all)
Subjects:Science > Physics > Optics. Light
Department:Faculty of Science > Physics > Institute of Photonics
Depositing user: Strathprints Administrator
Date deposited:11 Nov 2009 12:19
Last modified:20 Jan 2021 17:58
URI:https://strathprints.strath.ac.uk/id/eprint/9112
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