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InGaN multiple-quantum-well epifilms on GaN-silicon substrates for microcavities and surface-emitting lasers

Lee, J.K. and Cho, H. and Kim, B.H. and Park, S.H. and Gu, E. and Watson, I.M. and Dawson, M.D. (2006) InGaN multiple-quantum-well epifilms on GaN-silicon substrates for microcavities and surface-emitting lasers. New Physics: Korean Physical Society, 49 (1). pp. 407-411. ISSN 0374-4914

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Abstract

We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflectors (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.

Item type:Article
ID code:9072
Keywords:InGaN/GaN epifilms, GaN on silicon substrates, multi-quantum-well membranes, selective wetetching, distributed bragg reflector, microcavities, surface-emitting lasers, Optics. Light, Physics
Subjects:Science > Physics > Optics. Light
Science > Physics
Department:Faculty of Science > Physics > Institute of Photonics
Depositing user: Strathprints Administrator
Date deposited:02 Nov 2009 11:58
Last modified:09 Apr 2019 00:20
URI:https://strathprints.strath.ac.uk/id/eprint/9072
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