InGaN multiple-quantum-well epifilms on GaN-silicon substrates for microcavities and surface-emitting lasers
Lee, J.K. and Cho, H. and Kim, B.H. and Park, S.H. and Gu, E. and Watson, I.M. and Dawson, M.D. (2006) InGaN multiple-quantum-well epifilms on GaN-silicon substrates for microcavities and surface-emitting lasers. New Physics: Korean Physical Society, 49 (1). pp. 407-411. ISSN 0374-4914
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We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflectors (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.
Creators(s): |
Lee, J.K., Cho, H., Kim, B.H., Park, S.H., Gu, E. ![]() ![]() ![]() | Item type: | Article |
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ID code: | 9072 |
Keywords: | InGaN/GaN epifilms, GaN on silicon substrates, multi-quantum-well membranes, selective wetetching, distributed bragg reflector, microcavities, surface-emitting lasers, Optics. Light, Physics |
Subjects: | Science > Physics > Optics. Light Science > Physics |
Department: | Faculty of Science > Physics > Institute of Photonics |
Depositing user: | Strathprints Administrator |
Date deposited: | 02 Nov 2009 11:58 |
Last modified: | 03 Jan 2021 01:49 |
URI: | https://strathprints.strath.ac.uk/id/eprint/9072 |
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