Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI2Br for Stable All-Inorganic Perovskite Solar Cells

Mali, Sawanta S. and Patil, Jyoti V. and Steele, Julian A. and Rondiya, Sachin R. and Dzade, Nelson Y. and Hong, Chang Kook (2021) Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI2Br for Stable All-Inorganic Perovskite Solar Cells. ACS Energy Letters, 6. pp. 778-788. ISSN 2380-8195 (https://doi.org/10.1021/acsenergylett.0c02385)

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Abstract

Mixed-halide CsPbI2Br perovskite is promising for efficient and thermally stable all-inorganic solar cells; however, the use of conventional antisolvent methods and additives-based hole-transporting layers (HTLs) currently hampers progress. Here, we have employed hot-air-assisted perovskite deposition in ambient condition to obtain high-quality photoactive CsPbI2Br perovskite films and have extended stable device operation using metal cation doping and dopant-free hole-transporting materials. Density functional theory calculations are used to study the structural and optoelectronic properties of the CsPbI2Br perovskite when it is doped with metal cations Eu2+ and In3+. We experimentally incorporated Eu2+ and In3+ metal ions into CsPbI2Br films and applied dopant-free copper(I) thiocyanate (CuSCN) and poly(3-hexylthiophene) (P3HT)-based materials as low-cost hole transporting layers, leading to record-high power conversion efficiencies of 15.27% and 15.69%, respectively, and a retention of >95% of the initial efficiency over 1600 h at 85 °C thermal stress.

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