GaInNAs(Sb) surface normal devices

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Calvez, S. and Laurand, N. and Sun, H.D. and Weda, J. and Burns, D. and Dawson, M.D. and Harkonen, A. and Jouhti, T. and Pessa, M. and Hopkinson, M. and Poitras, D. and Gupta, J.A. and Leburn, C.G. and Brown, C.T.A. and Sibbett, W. (2007) GaInNAs(Sb) surface normal devices. Physics Status Solidi A, 205 (1). pp. 85-92. ISSN 1521-396X (http://dx.doi.org/10.1002/pssa.200777460)

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Abstract

After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs).

ORCID iDs

Calvez, S., Laurand, N. ORCID logoORCID: https://orcid.org/0000-0003-0486-4300, Sun, H.D., Weda, J., Burns, D., Dawson, M.D. ORCID logoORCID: https://orcid.org/0000-0002-6639-2989, Harkonen, A., Jouhti, T., Pessa, M., Hopkinson, M., Poitras, D., Gupta, J.A., Leburn, C.G., Brown, C.T.A. and Sibbett, W.;
CORE (COnnecting REpositories)