Gate-based spin readout of hole quantum dots with site-dependent g-factors

Russell, Angus and Zotov, Alexander and Zhao, Ruichen and Dzurak, Andrew S. and Gonzalez-Zalba, M. Fernando and Rossi, Alessandro (2023) Gate-based spin readout of hole quantum dots with site-dependent g-factors. Physical Review Applied, 19 (4). 044039. ISSN 2331-7043 (https://doi.org/10.1103/PhysRevApplied.19.044039)

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Abstract

The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is due to the compatibility with industrial manufacturing standards, as well as the ease of operation and addressability via all-electric drives. However, owing to a strong spin-orbit interaction, these systems present variability and anisotropy in key qubit control parameters such as the Landé g-factor, requiring careful characterization for reliable qubit operation. Here, we experimentally investigate a hole double quantum dot in silicon by carrying out spin readout with gate-based reflectometry. We show that characteristic features in the reflected phase signal arising from magnetospectroscopy convey information on site-dependent g-factors in the two dots. Using analytical modeling, we extract the physical parameters of our system and, through numerical calculations, we extend the results to point to the prospect of conveniently extracting information about the local g-factors from reflectometry measurements.

ORCID iDs

Russell, Angus, Zotov, Alexander, Zhao, Ruichen, Dzurak, Andrew S., Gonzalez-Zalba, M. Fernando and Rossi, Alessandro ORCID logoORCID: https://orcid.org/0000-0001-7935-7560;
  • Item type:Article
    ID code:85447
    Dates:
    Date
    Event
    13 April 2023
    Published
    20 March 2023
    Accepted
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:10 May 2023 15:01
    Last modified:11 Nov 2024 13:56
    URI:https://strathprints.strath.ac.uk/id/eprint/85447
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